Cool MOS™ Power
Transistor
Feature • New revolutionary high voltage technology
• Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPB20N60S5
VDS RDS(on)
ID
600 0.
19 20
V Ω A
PG-TO263
Type SPB20N60S5
Package PG-TO263
Ordering Code Q67040-S4171
Marking 20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse ID = 10 A, VDD = 50 V
EAS
Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate sourc...