SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
OptiMOS® Power-
Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID
P- TO262 -3-1 P- TO263 -3-2
40 4 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6014
Marking 2N04H4 2N04H4 2N04H4
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 660 25 6 ±20 300 -55.
.
.
+175 55/175/56
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
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