SPB80P06P G
SIPMOS® Power-
Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on) 0.
023
Continuous drain current
ID
-80 A
· 175°C operating temperature
° Pb-free lead plating: RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type SPB80P06P G
Package Lead free PG-TO263-3 Yes
Pin 1 PIN 2/4 PIN 3
G
D
S
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C, 1)
TC = 100 °C
Pulsed drain current TC = 25 °C
ID puls
Avalanche energy, single pulse
W ID = -...