M.
tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four-banks operation • MRS cycl...

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