InGaAs / InP PIN Chip ---TK 920M3C 1.
Scope •The specification applies to photo-diode chips for PIN-TIA.
•Type : TK920M3C.
2.
Structure •InGaAs / InP PIN Chip.
•P Electrode (anode) : Gold.
•N Electrode (cathode) : Gold.
3.
Size •Chip size : 500 × 500μm •Thickness : 200μm •Active area : 300μm (diameter) •Pattern drawing : per fig.
1 4.
Electro-Optical Characteristics Parameter Responsivity Dark Current Symbol R Id Test Condition Vr=5V,λ=1300nm Vr=5V Min.
0.
9 Typ.
1 1 (Ta = +25 ℃) Max.
Unit A/W 5 nA 231 231 500 Anode AR Coating P I Cathode 500 N 500 200 Active area 300Ø P Electrode Unit : μm fig.
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