Part Number
|
IRL540N |
Manufacturer
|
IRF |
Description
|
HEXFET Power MOSFET |
Published
|
Jul 6, 2005 |
Detailed Description
|
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PD - 9.1495
PRELIMINARY
l l l l l l
IRL540N
HEXFET® Power MOSFET
D
Logic-L...
|
Datasheet
|
IRL540N
|
Overview
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PD - 9.
1495
PRELIMINARY
l l l l l l
IRL540N
HEXFET® Power MOSFET
D
Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS
Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated
VDSS = 100V RDS(on) = 0.
044Ω
G S
ID = 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide v...
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