MITSUBISHI SEMICONDUCTORGaAs FET
MGF0921A
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0921A GaAs FET with an N-channel
schottky Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power Po=33dBm(TYP.
) @f=1.
9GHz,Pin=17dBm • High power gain Gp=17dB(TYP.
) @f=1.
9GHz • High power added efficiency ηadd=40%(TYP.
) @f=1.
9GHz,Pin=17dBm • Hermetic Package
APPLICATION
• For UHF Band power amplifiers
Fig.
1
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=500mA • Rg=200Ω
Delivery
-01:Tape & Reel(1K), -03:Trai(50pcs)
(Ta=25°C)
Absolute maximum ratings
Symbol Parameter
VGSO Gate to sourcebreakdown voltage VGDO Gate to drain breakdown voltage ID IGR IGF P...