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Provisional Data Sheet No.
PD-9.
1252B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
®
IRHM2C50SE IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.
60Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)...