PMR280UN
N-channel µTrenchMOS™ ultra low level FET
M3D173
Rev.
01 — 5 March 2004
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage.
1.
3 Applications
s Driver circuits s Switching in portable appliances.
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4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.
53 W s ID ≤ 0.
98 A s RDSon ≤ 340 mΩ.
2.
Pinning information
Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d)
g 1 Top view 2
MBK090 MBB076
Simplified outl...