SEMICONDUCTOR TECHNICAL DATA
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The RF Line
Microwave Pulse Power
Transistor
Designed for 1025– 1150 MHz pulse common base amplifier applications such as TCAS, T ACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.
5 dB Min, 9.
0 dB (Typ) • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Hermetically Sealed Industry Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching • Characterized with 10 µs, 1% Duty Cycle Pulses
MRF10502
500 W (PEAK) 1025 – 1150 MHz MICROWAVE POWER
TRANSISTOR NPN ...