PD- 93818
IRGP30B120KD-E
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.
76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package
C
Motor Control Co-Pack IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
28V
VGE = 15V, IC = 25A, 25°C
N-channel
Benefits
• Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting
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