|
Part Number
|
20N60BD1 |
|
Manufacturer
|
IXYS Corporation |
|
Description
|
IGBT |
|
Published
|
Aug 23, 2005 |
|
Detailed Description
|
HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V...
|
|
Datasheet
|
20N60BD1
|
Overview
HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.
7 100
V A V ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C
E C = Collector, TAB = Collector
C (TAB)
G = Gate, E = Emitter,
Features • International standar...
Similar Datasheet