Power
Transistors
2SB1156
Silicon
PNP epitaxial planar type
For power switching Complementary to 2SD1707
Unit: mm
s Features
q q q q
16.
2±0.
5 12.
5 3.
5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –130 –80 –7 –30 –20 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
21.
0±0.
5 15.
0±0.
2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pac...