PD - 94076
IRG4BC20W-S
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
C
VCES = 600V
G E
VCE(on) typ.
= 2.
16V
@VGE = 15V, IC = 6.
5A
N-channel
Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topol...