PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
G
E
N-Channel
VCES = 600V VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A
Benefits
• Generation 4 IGBTs offers the highest efficiencies available
• Optimized for specific application conditions • HEXFRED ...