PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies 5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
27V
@VGE = 15V, IC = 9.
0A
n-ch an nel
Benefits
• Latest generation 4 IGBTs offer highest power density motor controls ...