Part Number
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0809LD120 |
Manufacturer
|
GHZ Technology |
Description
|
120 Watt / 28V / 1 Ghz LDMOS FET |
Published
|
Aug 24, 2005 |
Detailed Description
|
R.0.2P.991602-BEHRE
0809LD120
120 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a ...
|
Datasheet
|
0809LD120
|
Overview
R.
0.
2P.
991602-BEHRE
0809LD120
120 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz.
The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.
CASE OUTLINE 55QV Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W .
6°C/W 65V ±20V -65 to +200°C +200°C
ELECTRICAL CHARACTERISTICS @ 25°C PER SIDE SYMBOL...
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