®
STD19NE06L
N - CHANNEL 60V - 0.
038 Ω - 19A - TO-251/TO-252 STripFET™ POWER MOSFET
TYPE STD19NE06L
s s s s
V DSS 60 V
R DS(o n) 0.
05 Ω
ID 19 A
s
TYPICAL RDS(on) = 0.
038 Ω 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 2 1
1 3
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s ...