STH15NA50/FI STW15NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STH15NA50 STH15NA50FI STW15NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) 0.
4 Ω 0.
4 Ω 0.
4 Ω
ID 14.
6 A 9.
3 A 14.
6 A
TO-247
TYPICAL RDS(on) = 0.
33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218
1
3 2 1
3
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and sup...