STP80N06-10
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS
TRANSISTOR
PRELIMINARY DATA TYPE STP80N06-10
s s s s s s s
V DSS 60 V
R DS(on) 0.
010 Ω
ID 80 A
TYPICAL RDS(on) = 8.
5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s PWM MOTOR CONTROL s DC-DC & DC-AC CONVERTER s SYNCROUNOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( • ) P tot dV/dt(1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate...