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STW8NA80 STH8NA80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
PRELIMINARY DATA
TYPE STW 8NA80 STH8NA80F I
s s s s s s s
V DSS 800 V 800 V
R DS(on) 1.
50 Ω 1.
50 Ω
ID 7.
2 A 4.
5 A
TYPICAL RDS(on) = 1.
3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
2 1
3
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLI...