MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF653/D
NPN Silicon RF Power
Transistor
Designed for 12.
5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
• Specified 12.
5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.
0 dB (Typ) Efficiency = 65% (Typ) • Gold Metallized, Emitter Ballasted for Long Life and Reliability • Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Con...