MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF6522 - 70/D
The RF MOSFET Line
RF Power Field Effect
Transistor
Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
• Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Typ) • Available in Tape and Reel.
R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFET
MRF6522−70R3
921 - 960 MHz, 70 W, 26 V LATERAL N -...