Freescale Semiconductor Technical Data
Document Number: MRF6S27085H Rev.
1, 1/2005
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 20 Watts Avg.
, Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
Peak/Avg.
= 9.
8 dB @ 0.
01% Probability on CCDF.
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