IRFD120
Data Sheet January 2002
1.
3A, 100V, 0.
300 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Features
• 1.
3A, 100V • rDS(ON) = 0.
300Ω • Single Pulse Avalanche Energy Rated • SOA i...