DatasheetsPDF.com

IRFD120

Part Number IRFD120
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFET
Published Sep 13, 2005
Detailed Description IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, t...
Datasheet IRFD120




Overview
IRFD120 Data Sheet January 2002 1.
3A, 100V, 0.
300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Features • 1.
3A, 100V • rDS(ON) = 0.
300Ω • Single Pulse Avalanche Energy Rated • SOA i...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)