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Part Number
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MTB2N60E |
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Manufacturer
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Motorola |
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Description
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TMOS POWER FET |
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Published
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Sep 13, 2005 |
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Detailed Description
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB2N60E/D
™ Data Sheet TMOS E-FET.™ High Energy Power F...
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Datasheet
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MTB2N60E
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Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB2N60E/D
™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB2N60E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor ...
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