MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06E/D ™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount Designer's MTB36N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltag...

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