Part Number
|
MTB8N50E |
Manufacturer
|
Motorola |
Description
|
TMOS POWER FET |
Published
|
Sep 13, 2005 |
Detailed Description
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB8N50E/D
™ Data Sheet TMOS E-FET.™ High Energy Power F...
|
Datasheet
|
MTB8N50E
|
Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB8N50E/D
™ Data Sheet TMOS E-FET.
™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB8N50E
TMOS POWER FET 8.
0 AMPERES 500 VOLTS RDS(on) = 0.
8 OHM
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is de...
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