an AMP company
RF MOSFET Power 100 - 500 MHz
Features
l l l
Transistor,
5W, 28V
UF2805B
A B E
v2.
00
N-Channel Enhancement DUOS Structure Lower Capacitances Lower Noise Floor
Mode Device Operation
for Broadband
0 Common Source Configuration
l l
100 MHz to 500 MHz Operation .
* 9
Absolute
Maximum Ratings at 25°C
Electrical
Characteristics
at 25°C
RF MOSFET Power
Transistor,
5W, 28V
UF2805B
v2.
00
Typical Broadband Performance
Curves
CAPACITANCES
7
vs VOLTAGE
POWER OUTPUT
P,,=O.
3 W I,,=50 a7
vs VOLTAGE
mA F&O0 MHz
1
F=l .
O MHz
5
10
15 v,, (W
20
25
30
5
10
15
20 v,, (V)
25
30
35
GAIN vs FREQUENCY
V,,=28 V Po,+O
EFFICIENCY
vs FREQUENCY
W
W I,,=50 mA
V,,=28 V...