RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
2OW, 28V
UF2820P
v2.
00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor
Mode Device Operation
for Broadband
Common Source Configuration
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I
V05 VGS IDS PD T, TSTG I
65 20 2.
8 53 200 1 -55to+150 I I
V v A W “C “C ( I
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units lest Conditions
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current GateTh...