an AMP
company
RF MOSFET Power 100 - 500 MHz
Features
N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device
Transistor,
lOOW, 28V
UF281 OOM
Operation Devices
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
pi
Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.
7 W “C “C “Ciw
PD T, T STG El JO
I4 II P
&w 505 m
t.
74 a&b, a¶
.
m4 am ooc
1 1 1
ale a?4 ace
Electrical Characteristics
I Parameter
at 25°C
( Symbol 1 Min 1 Max 1 Units 1 Test Conditions
1
Drain-Source
Breakdown Voltage
BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.
5 C RSS %
65
3.
0 3.
0
V mA pA V S ...