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Part Number
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IXDR30N120 |
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Manufacturer
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IXYS Corporation |
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Description
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High Voltage IGBT |
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Published
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Sep 21, 2005 |
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Detailed Description
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High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability ...
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Datasheet
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IXDR30N120
|
Overview
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability Square RBSOA
G
C
E IXDR 30N120
IXDR 30N120 D1 IXDR 30N120
VCES
= 1200 V
IC25 = 50 A
VCE(sat) typ = 2.
4 V
C G
E IXDR 30N120 D1
ISOPLUS 247TM E153432 G C E
Isolated Backside*
G = Gate C = Collector E = Emitter
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC
TJ Tstg VISOL Weight
Symbol
V(BR)CES VGE(th) ICES
IGES VCE(sat)
Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous Transient
TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 47 Ω Clamped inductive load, L = 30 mH
VGE = ±15 V, VCE = VCES, TJ = 125°C ...
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