DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2712GR
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2712GR is P-Channel MOS Field Effect
Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
1.
8 MAX.
• Low on-state resistance RDS(on)1 = 13 mΩ MAX.
(VGS = −10 V, ID = −5.
0 A) RDS(on)2 = 21 mΩ MAX.
(VGS = −4.
5 V, ID = −5.
0 A) RDS(on)3 = 26 mΩ MAX.
(VGS = −4.
0 V, ID = −5.
0 A) • Low Ciss: Ciss = 2000 pF TYP.
• Small and surface mount package (Power SOP8)
FEATURES
1
4 5.
37 MAX.
+0.
10 –0.
05
6.
0 ±0.
3 4.
4 0.
8
1.
44
0.
15
0.
05 MIN.
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