DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2780GR
SWITCHING N-CHANNEL POWER MOS FET/
SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2780GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
FEATURES
• Built a
Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 6.
2 mΩ TYP.
(VGS = 10 V, ID = 7 A) RDS(on)2 = 8.
7 mΩ TYP.
(VGS = 4.
5 V, ID = 7 A) RDS(on)3 = 10.
3 mΩ TYP.
(VGS = 4.
0 V, ID = 7 A) • Low Ciss: Ciss = 1200 pF TYP.
• Small and surface mount package (Power SOP8)
1 4 5.
37 MAX.
+0.
10 –0.
05
6.
0 ±0.
3 4.
4 0.
8
1.
8 MAX.
1...