DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2756GR
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
PACKAGE DRAWING (Unit: mm)
8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.
0 ±0.
3 4.
4
+0.
10 –0.
05
FEATURES
• Low on-state resistance RDS(on)1 = 105 mΩ MAX.
(VGS = 10 V, ID = 2.
0 A) RDS(on)2 = 150 mΩ MAX.
(VGS = 4.
0 V, ID = 2.
0 A) • Low Ciss: Ciss = 260 pF TYP.
• Built-in G-S protection diode against ESD • Small and surface mount package (Power SOP8)
1
4 5.
37 MAX.
1.
44
0.
8
1.
8 MAX.
0.
05 MIN.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.
15
0.
5 ±0...