Part Number
|
IXFR10N100F |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFET Power MOSFETs |
Published
|
Sep 23, 2005 |
Detailed Description
|
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM
VDSS
ID25
RDS(on) 1.05 Ω 1.20 Ω
12N100F 1000 V 10 A IXFR 10N100F 1000 V 9...
|
Datasheet
|
IXFR10N100F
|
Overview
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM
VDSS
ID25
RDS(on) 1.
05 Ω 1.
20 Ω
12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG ...
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