Part Number
|
IXFR100N25 |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFET Power MOSFETs |
Published
|
Sep 23, 2005 |
Detailed Description
|
Advance Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) N-Channel Enhancem...
|
Datasheet
|
IXFR100N25
|
Overview
Advance Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFR 100N25
VDSS ID25
RDS(on)
= 250 V = 87 A = 27 mΩ
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = External lead current limit = 25°C, Note 1 = 25°C
Maximum Ratings 250 250 ± 20 ± 30 87 75 400 100 64 3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
Isolated backside*
G = Gate...
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