Part Number
|
IXFR10N100Q |
Manufacturer
|
IXYS Corporation |
Description
|
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
Published
|
Sep 23, 2005 |
Detailed Description
|
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS
VDSS
ID25
RDS(on) 1.05 W 1...
|
Datasheet
|
IXFR10N100Q
|
Overview
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS
VDSS
ID25
RDS(on) 1.
05 W 1.
20 W
1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 30 5 250 -55 .
.
.
+150 150 -55 .
.
.
+150 1.
6 mm (0.
063 in.
) from case for ...
Similar Datasheet