PMF280UN
N-channel µTrenchMOS™ ultra low level FET
Rev.
01 — 27 February 2004
M3D102
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.
3 Applications
s Driver circuits s Switching in portable appliances.
1.
4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.
56 W s ID ≤ 1.
02 A s RDSon ≤ 340 mΩ.
2.
Pinning information
Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d)
g 1 Top view 2
MBC870
Simplified outline
...