Photo
transistors
PNA1605F (PN116)
Silicon planar type
Unit: mm
For optical control systems
1.
5±0.
2
4.
5±0.
15 3.
5±0.
15
Not soldered 2.
0
2.
1±0.
15 1.
6±0.
15 0.
8±0.
1
12.
5 min.
10 min.
• High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.
) • Fast response: tr , tf = 8 µs (typ.
) • Side-view type package
3.
9±0.
25
■ Features
(2.
4)
3-0.
45±0.
2 0.
45±0.
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-emitter voltage (Base open) Collector-base voltage (Emitter open) Emitter-collector voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Sym...