Preliminary data
SPP06N80C2
Cool MOS™ Power
Transistor
Feature
· · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
Product Summary
VDS RDS(on) ID
800 900 6
P-TO220-3-1
V mW A
Type SPP06N80C2
Package P-TO220-3-1
Ordering Code Q67040-S4351
Marking SPP06N80C2
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol
Value 6 3.
8 18 230 0.
2 6 6 ±20 83 -55.
.
.
+150
Unit A
ID
Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse
ID=1.
5A, V DD...