Ordering number : ENN8202
VEC2803
VEC2803
Features
• •
MOSFET : P-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
General-Purpose Switching Device Applications
DC/DC converter.
Composite type with a P-Channel Sillicon MOSFET and a
Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• 4V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepeti...