Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features • 200mA ID • Ultra small surface mount package • RDS(ON) 5Ω • Pin-out compatible with most SOT23 MOSFETS Absolute Maximum Ratings Drain-Source Voltage .
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60 V Gate-Source Voltage .
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±40 V Drain Current .
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200 mA Power Dissipation (TA = 25o C) .
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