IPD03N03LB G
OptiMOS®2 Power-
Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 30 3.
3 90 V mΩ A
PG-TO252-3-11
Type IPD03N03LB G
Package P-TO252-3-11
Ordering Code Q67042-S4260
Marking 03N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate so...