Freescale Semiconductor Technical Data
Document Number: MRF6S23100H Rev.
0, 8/2005
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for 802.
16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz.
Suitable for Class AB feedforward and predistortion systems.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 15.
4 dB Drain Efficiency — 23.
5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.
5 dBc @ 3.
84 MHz Channel Bandwidth • Capable of Handling...