SSM3J05FU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM3J05FU
Power Management Switch High Speed Switching Applications
· · · Small package Low on resistance : Ron = 3.
3 Ω (max) (@VGS = −4 V) : Ron = 4.
0 Ω (max) (@VGS = −2.
5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±12 -200 -400 150 150 -55~150 Unit V V mA
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC JEITA TOSHIBA
― SC-70 2-2E1E
Note 1: Mounted on FR4 board.
2 (25.
4 mm ´ 25.
4 mm ´ 1.
6 t, Cu pad: 0.
6 mm ´ 3)
...