Part Number
|
IRFR120N |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Sep 28, 2005 |
Detailed Description
|
PD - 91365B
IRFR/U120N
HEXFET® Power MOSFET
l l l l l
Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Proce...
|
Datasheet
|
IRFR120N
|
Overview
PD - 91365B
IRFR/U120N
HEXFET® Power MOSFET
l l l l l
Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.
21Ω ID = 9.
4A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave solde...
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