Part Number
|
IRFR120A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Power MOSFET |
Published
|
Sep 28, 2005 |
Detailed Description
|
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
|
Datasheet
|
IRFR120A
|
Overview
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
155 Ω (Typ.
)
IRFR/U120A
BVDSS = 100 V RDS(on) = 0.
2 Ω ID = 8.
4 A
D-PAK
2 1 3 1
I-PAK
2
3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipatio...
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