Part Number
|
KM736V687A |
Manufacturer
|
Samsung Semiconductor |
Description
|
64Kx36-Bit Synchronous Burst SRAM |
Published
|
Sep 30, 2005 |
Detailed Description
|
KM736V687A
Document Title
64Kx36-Bit Synchronous Burst SRAM
64Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 ...
|
Datasheet
|
KM736V687A
|
Overview
KM736V687A
Document Title
64Kx36-Bit Synchronous Burst SRAM
64Kx36 Synchronous SRAM
Revision History
Rev.
No.
0.
0 0.
1 History Initial draft Change DC Characteristics.
ICC value from 320mA to 250mA at -7.
ICC value from 300mA to 230mA at -8.
ICC value from 280mA to 200mA at -9.
ISB value from 90mA to 70mA at -7.
ISB value from 80mA to 60mA at -8.
ISB value from 70mA to 50mA at -9.
ISB1 value from 30mA to 20mA ISB2 value from 30mA to 20mA Final spec release.
Add VDDQ Supply voltage( 2.
5V ) Min tOH Parameter Change : from 2.
0ns to 3.
0ns Min tLZC Parameter Change : from 0ns to 3ns Draft Date July.
03.
1998 Sep.
14.
1998 Remark Preliminary Preliminary
1.
0 2.
0 3.
0
Nov.
16.
1998 Dec.
02.
1998 D...
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