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C945


Part Number C945
Manufacturer Weitron
Title NPN Transistors
Description NPN Transistors P b Lead(Pb)-Free C945 TO-92 1. EMITTER 2. COLLECTOR 3. BASE 12 3 Junction Temperature Storage Temperature 0.4 Tj +150 °C ...
Features nt vs Collector to Emitter Voltage FIG.3 Collector and Bade Saturation Voltage vs Collector Current FIG.4 Gain Bandwidth Product vs Emitter Current WEITRON http://www.weitron.com.tw 3/4 08-Feb-06 H L C945 TO-92 Outline Dimensions E C J K G unit:mm TO-92 Dim A B C D E G H J K L Min Max 3.3...

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C940 : ·With TO-3 package ·High current capability ·Wide area of safe operation APPLICATIONS ·For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC940 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25? ) SYMBOL PARAMETER VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Tmb=25? VALUE 200 90 7 7.5 15 50 150 -65~150 UNIT V V V A A W ? ? SavantIC Semiconductor Swwiwli.DcaotanS.

C941 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 100 20 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characte.

C941TM : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM 2SC941TM High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications Unit: mm · Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 100 20 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characte.

C945 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C945 FEATURES Power dissipation PCM: Collector current ICM: V (BR) CBO: 0.15 60 A V Collector-base voltage Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter voltage breakdown Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA, f =30 MHz VCB=10V, IE=0, f=1MHZ VCE=6V,.

C945 : NPN TRANSISTOR www.DataSheet4U.com 100mA C945 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ CONDITION Ic=1mA Ic=5uA Ie=50£g A Vcb=60V Veb=5V Ic=100mA, Ib=10mA Vce=6.0V,Ic=1.0mA Vce=6V, Ie=10mA Vcb=10V,Ie=0,f=1MHz PARAMETERS SYMBOL MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVceo 50 V Collector-Base Breakdown Voltage BVcbo 60 V Emitter-Base Breakdown Voltage BVebo 5 V Collector-Base Leakage Icbo 0.1 uA Emitter-Base Leakage Iebo 0.1 uA Collector-Emitter Saturation Voltage Vce¡] sat¡ ^ 0.18 0.3 V DC Current Gain Hfe 90 200 600 Collector Current Ic 100 mA Current Gain Bandwidth fT 100 180 MHz Output Capacitance Cob 4.5 6.0 pF Power Dissipation Pc 0.

C945 : TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN ) TO-92 FEATURE z Excellent hFE linearity z Low noise z Complementary to A733 1.EMITTER 2.COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 400 125 -55-125 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Colle.

C945 : WILLAS SO1T.0-A2S3URPFAlaCEsMtiOcU-NETnScCHaOpTsTKuYlBaAtReRTIErRaRnECsTiIsFItEoRSrs-20V- 200V SOD-123+ PACKAGE FM120-M+ C945 THRU FM1200-M Pb Free Produc Features • Batch process design, excellent power dissipation offers Package outline better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to TRANSISToOptRim(izNePbNoa)rd space. FEATURE•• HLoigwhpcouwrreernltocsasp, ahibgihlitey,ffliocwiefnocryw. ard voltage drop. z Ex•ceHlilgehnstuhrgFeE cLainpaebairliittyy. z Lo•wGnuoairsdering for overvoltage protection. • Ultra high-speed switching. z Pb•-FSrileiceonpeapcitakxaiagl eplainsaar cvhaipil,ambelteal silicon junction. SOD-123H SOT-230.1.

C945 : C945 TRANSISTOR (NPN) FEATURE SOT-23 z Excellent hFE Linearity z Low noise z Complementary to A733 1. BASE 2. EMITTER 3. COLLECTOR MARKING:CR· MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 60 50 5 150 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-.

C945 : only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such appli.

C945 : Elektronische Bauelemente C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Excellent hFE Linearity  Low noise  Complementary to A733 MARKING Product C945 Marking Code CR SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch CLASSIFICATION OF hFE(1) Product-Rank C945-L Range 130-200 C945-H 200-400 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature .

C945 : VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous C945 CR 50 60 5.0 150 Unit V V V mA Thermal Characteristics Symbol Ptot RθJA TJ, TSTG Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 C945 200 1.6 625 -55 to +150 Unit mW mW/° C ° C/W °C Rev. A/AH Page 1 of 5 SMD Transistor (NPN) Electrical Characteristics (T Ambient=25ºC unless no.

C945 : The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current 60 V 50 V 5.0 V 100 mA 20 mA PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. 0.5 1.27 2.54 1.77 MAX. 4.2 MAX. 123 1. Emit.

C945P : The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) −55 to +150°C +150°C Maximum Total Power Dissipation Maximum Voltages and Currents (TA = 25°C) 250 mW VCBO Collector to Base Voltage 60 V VCEO VEBO IC Collector to Emitter Voltage Emitter to Base Voltage Collector Current 50 V 5.0 V 100 mA IB Base Current 20 mA 0.5 1.27 2.54 1.77 MAX. 4.2 MAX. 123 1..

C945T : Elektronische Bauelemente C945T NPN Silicon Plastic-Encapsulate Transistor FEATURES Low noise Excellent hFE linearity Complementary to A733T RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5V Collector Current Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 125, -55~125 °C 1 2 3 12 3 1. EMITTER 2. COLLECTOR 3. BASS ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Parameter Symbol Test Condit.

C948 : www.DataSheet.in .




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